Semiconductor member, semiconductor device and manufacturing methods thereof
US6639327B2 · kind B2 · utility
25Cited by
13References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Jul 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/764
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a bonded semiconductor member, microgaps are formed on a substrate side of a bonding interface to thereby constitute a gettering site, and heavy metal elements contaminated in the substrate are captured by the microgaps. The bonded semiconductor member is manufactured by interposing the microgaps between two substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.