Magnetic memory device
US6639830B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2002 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Oct 22, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a magnetic memory cell for use in MRAM technology. The cell includes a first ferromagnetic fixed (hereinafter FMF) layer with a first magnetic moment, a second FMF layer with a second magnetic moment, at least one ferromagnetic soft (hereinafter FMS) layer with a third magnetic moment, said FMS layer being arranged between the first and second FMF layers, a first non-magnetic intermediate layer arranged between said first FMF layer and said FMS layer, and a second non-magnetic intermediate layer arranged between said second FMF layer and said FMS layer. Said first intermediate layer is adapted to allow a spin-polarized write current to pass between said first FMF layer and said FMS layer, said write current having an amount sufficient to change a relative orientation of said first and third magnetic moments. Said second intermediate layer is adapted to influence the resistance between said second FMF layer and said FMS layers at a predetermined read voltage in dependence on a relative orientation of said second and third magnetic moments, said read voltage creating a spin-polarized current amount lower than said write current amount. Said first and second m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.