Non-volatile semiconductor memory device
US6639837B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2001 |
| Grant date | Oct 28, 2003 |
| Priority date | — |
| Expiry date | Dec 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device includes: an array of electrically rewritable nonvolatile data storage memory cells each having a transistor structure with a control gate; reference current source circuit configured to generate a first reference current adaptable for use during an ordinary read operation and a second reference current for use during a verify-read operation for data status verification in one of writing and erasing events; a sense amplifier configured to compare read currents of a selected memory cell as selected during the ordinary read operation and the verify-read operation with the first and second reference currents respectively to thereby perform data detection; and a driver configured to give an identical voltage to the control gate of the selected memory cell presently selected during the ordinary read operation and the verify-read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.