Bipolar transistor and method for producing same

US6642553B1 · kind B1 · utility

Assignee

• Institut fuer Halbleiterphysik Frankfurt (Oder) GmbH · DE

Inventors

• Juergen Drews · Pirna, DE
• Bernd Tillack · Frankfurt (Oder), DE
• Bernd Heinemann · Frankfurt, DE
• Dieter Knoll · Frankfurt (Oder), DE

Key dates

• Filing date: Mar 22, 2001
• Grant date: Nov 4, 2003
• Expiry date: Mar 22, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/891

Abstract

The invention relates to a bipolar transistor and a method for producing same. The aim of the invention is to provide a bipolar transistor and a method for producing same, which during the use of a single-process poly-silicon technology with differential epitaxis for the production of bases overcomes the disadvantages of conventional systems, so as notably further to improve the high-speed properties of a bipolar transistor, provide the most conductive connections possible between the metal contacts and the active (internal) transistor region as well as a minimized passive transistor surface, while at the same time avoiding greater process complexity and increased contact resistances. To this end a surface relief is produced in the active emitter region by a wet-chemical process. A single-process poly-silicon bipolar transistor having a base produced by epitaxis in accordance with the invention permits a reduction in external base resistance without causing a deterioration in emitter properties. Because the internal and external base regions are deposited continuously no interface problems arise during connection of the base. Base-collector capacity can also be lowered.