Linearity radio frequency switch with low control voltage
US6642578B1 · kind B1 · utility
113Cited by
36References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Jul 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/15
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A field effect transistor used in radio frequency switching applications and having a linear performance characteristic is disclosed. The transistor comprises a plurality of gate lines, a source terminal, a drain terminal, and two feed forward capacitors electrically coupled to the source and drain terminals and the gate line at a plurality of points along the line. An improved transistor preferably includes three or more gate lines to help improve harmonic suppression.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.