Semiconductor device comprising buried channel region
US6642581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Mar 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate insulating film formed on a semiconductor substrate between first diffusion layers, a gate electrode including a first gate portion formed on the gate insulating film and a second gate portion formed on the first gate portion, a first width in a channel direction of the first gate portion being substantially equal to a width in that of the gate insulating film, and a second width in the channel direction of the second gate portion being larger than the first width, a gate side wall insulating film including a first side wall portion formed on a side surface of the first gate portion and the gate insulating film and a second side wall portion formed on a side surface of the second gate portion, and a second diffusion layer formed apart from the first diffusion layers below the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.