Semiconductor device, microcomputer and flash memory
US6643193B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 20, 2002 |
| Grant date | Nov 4, 2003 |
| Priority date | — |
| Expiry date | Sep 20, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device whose characteristics are highly reliably regulated for circuits whose desired characteristics need to be realized without being affect by unevenness in device characteristics is to be provided. A replica MOS transistor for amperage measurement connected to an external measuring terminal is provided. A delay circuit and other circuits whose desired characteristics are to be realized have a constant current source MOS transistor formed in the same process as the replica MOS transistor, and a trimming voltage vtri is commonly applied to the respective gates of the constant current source MOS transistor and the replica MOS transistor. Trimming data determined on the basis of an amperage measured from the external measuring terminal are stored into a memory means such as an electrically rewritable non-volatile memory or the like. The trimming data determine the trimming voltage vtri.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.