Method for modifying the doping level of a silicon layer
US6645803B1 · kind B1 · utility
5Cited by
12References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1996 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Sep 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for modifying the doping level of a doped silicon layer including the steps of coating the silicon layer with a silicide layer made of a refractory metal, and heating the interface region between the silicon and the silicide to a predetermined temperature. The method may be applied to the fabrication of an adjustable resistor or a MOS transistor having an adjustable threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.