Method of improving the fabrication of etched semiconductor devices
US6645848B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Jun 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.