Semiconductor light emitting device and method
US6646292B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Mar 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
Abstract
A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient &agr;, at the emission wavelength of the active region, of &agr;>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, &agr;, of the substrate material is &agr;<1 cm−1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.