Integrated circuit metallization using a titanium/aluminum alloy
US6646346B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Oct 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1433
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.