Test probe for semiconductor devices, method of manufacturing of the same, and member for removing foreign matter
US6646455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1998 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Aug 13, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/06755
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:&thgr;=cos−1(1−t/R)≧15°where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is &thgr;, the probe have a flat portion at an end of the tip portion. Accordingly, a contact surface can be established between the probe trip and the pad with a sufficient degree of electrical continuity, and when the the probe level is adjusted in the probing, a time required for positioning the probe …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.