Electrically pumped vertical optical cavity with improved electrical performance
US6647041B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2000 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | May 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A monolithic semiconductor device extends primarily along a vertical direction and includes the following layers. A first semiconductor layer and a second semiconductor layer form an active region between them. A third semiconductor layer is doped the same type as the second semiconductor layer but is lattice mismatched to the second semiconductor layer. The lattice mismatch results in unwanted electrical effects. An additional doping layer, preferably a delta doping layer, is located in close proximity to the interface between the second and third semiconductor layers. The delta doping layer mitigates the unwanted electrical effects introduced by the lattice mismatch. In a preferred embodiment, the device further includes a bottom mirror layer and a top mirror layer, which together form a laser cavity including the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.