Nitride semiconductor laser device and method for manufacturing the same
US6647042B2 · kind B2 · utility
3Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2002 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | Apr 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0218
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.