Grating-outcoupled surface-emitting lasers using quantum wells with thickness and composition variation
US6647048B2 · kind B2 · utility
6Cited by
12References
20Claims
0Family size
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Key dates
| Filing date | Apr 27, 2001 |
| Grant date | Nov 11, 2003 |
| Priority date | — |
| Expiry date | May 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode system that has two distributed Bragg reflector reflectors at either end and an outcoupling aperture between the reflectors. The quantum wells in the active region are thicker in the gain region than in other parts of the device, increasing efficiency and lowering threshold current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.