Method for low-temperature sharpening of silicon-based field emitter tips
US6648710B2 · kind B2 · utility
3Cited by
14References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Jan 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A low temperature process for silicon-based field emitter tip sharpening. A rough silicon-based field emitter tip is exposed to xenon difluoride gas in a process chamber to carry out low-temperature, isotropic etching of the rough silicon-based field emitter tip to produce a final, sharpened field emitter tip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.