Triode-type field emission device having field emitter composed of emitter tips with diameter of nanometers and method for fabricating the same
US6648712B2 · kind B2 · utility
16Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Oct 2, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Oct 2, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J31/127
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A triode-type field emission device includes an insulating substrate; a cathode formed on the insulating substrate; a field emitter aligned on the cathode, wherein the field emitter includes a plurality of emitter tips and each emitter tip has the diameter of nanometers; an insulating layer positioned around the field emitter for electrically isolating the field emitter; and a gate electrode formed on the insulating layer, wherein the gate electrode is closed to an upper portion of the field emitter. Therefore, the triode-type field emission device may be operable in a low voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.