Apparatus and method for plasma processing
US6648976B1 · kind B1 · utility
6Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2000 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Feb 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application. A substrate hold stage is set in the vacuum chamber, with the substrate hold stage including a set face having a recessed part, wherein a rear face of a substrate to be subjected to plasma processing is held on the set face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.