Thin film capillary process and apparatus
US6649078B2 · kind B2 · utility
39Cited by
55References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 6, 2000 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Oct 18, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/0376
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.