Method of manufacturing high-power light emitting diodes
US6649437B1 · kind B1 · utility
89Cited by
15References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Aug 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
The present invention is related to a method of manufacturing high efficiency LEDs. The LEDs uses a metal reflection layer to solve the problem of light absorption by the substrate, and improves the illumination. It also forms a vertical structure where the P and N ends are on the top and bottom sides of the LEDs, respectively. A vertical structure is easier for final packaging. In addition, the present invention uses a metal substrate to replace the semiconductor substrate in order to improve the heat dissipation, and enable the LEDs to operate at a higher current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.