Method for the formation and lift-off of porous silicon layers
US6649485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Mar 9, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F−) ions between the surface of the semiconductor substrate and an anode. The method further comprises applying a predetermined current between the anode and the cathode. The method further comprises maintaining the predetermined current at substantially the same current value for a sufficient amount of time to obtain a low porosity layer at said surface. A high porosity layer positioned under the low porosity layer is also obtained by the method of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.