Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
US6649540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Nov 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5. The substituted organosilane compounds have the general formula:R1SiR2R3R4 or R5R6R7SiR′SiR8R9R10 or (—R11—)SiR12R13where, R1 is selected from the group consisting of a cyclic or acyclic hydrocarbon having from one carbon to eight carbon atoms; R2, R3 and R4 are the same or different, and are selected from the groups consisting of H, CH3, vinyl or other hydrocarbon containing two or more carbon atoms; R5, R6, R7, R8, R9, R10 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different, having from one carbon to eight carbon atoms; R′ is a linking group between the two silicon atoms, and can be a cyclic or acyclic hydrocarbon group, having from one carbon to six carbon atoms; R11 is a chelate hydrocarbon group containing two or more carbon atoms, R12 and R13 are a cyclic or acyclic hydrocarbon group includin…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.