Nitride-based semiconductor light-emitting device
US6649942B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | May 21, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an emission layer, consisting of a nitride-based semiconductor, formed on the first nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the emission layer, a second conductivity type intermediate layer, consisting of a nitride-based semiconductor, formed on the second nitride-based semiconductor layer, a second conductivity type contact layer, including a nitride-based semiconductor layer having a smaller band gap than gallium nitride, formed on the intermediate layer, and a light-transmitting electrode formed on the contact layer. Thus, a carrier concentration and electric conductivity higher than those of a contact layer (nitride-based semiconductor layer) consisting of gallium nitride is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.