Active pixel having reduced dark current in a CMOS image sensor
US6649950B2 · kind B2 · utility
15Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Aug 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
The active pixel includes a photodiode, a transfer gate, and a reset transistor. The photodiode is substantially covered with an overlying structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage current sources, which result in dark current. In one embodiment, the photodiode is covered by a FOX region in combination with the transfer gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.