Semiconductor device and method of manufacturing the same

US6649965B2 · kind B2 · utility

Assignee

• FUJITSU LIMITED · JP

Inventors

• Kazuhiko Takada · Shizuoka, JP
• Shinji Sugatani · Saitama, JP

Key dates

• Filing date: Mar 7, 2002
• Grant date: Nov 18, 2003
• Expiry date: Mar 7, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

There are provided the steps of forming a tunnel insulating film on a semiconductor substrate, forming a first semiconductor film constituting a lower portion of a floating gate on the tunnel insulating film, forming device isolation recesses by etching device isolation regions on the first semiconductor film, the tunnel insulating film, and the semiconductor substrate, forming an device isolation insulating film in the device isolation recesses and on the first semiconductor film, removing the device isolation insulating film from an upper surface of the first semiconductor film and thinning the device isolation insulating film on the device isolation recesses, growing selectively a second semiconductor film serving as an upper portion of the floating gate on the first semiconductor film and growing the second semiconductor film on the device isolation insulating film to extend in the lateral direction, forming a dielectric film on the floating gate, and forming a conductive film serving as a control gate on the dielectric film.