MEMS hybrid structure having flipped silicon with external standoffs
US6649987B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Nov 8, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B3/0086
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A structure of a hybrid MEMS structure is provided wherein a plate comprises a thin actuatable layer of conductive silicon, such as a MEMS actuatable element, and a thicker handle layer of conductive silicon to provide structural integrity which are separated by a thin oxide, together forming an SOI wafer. This plate is mounted to a substrate, typically ceramic, with the thin actuatable layer facing the substrate and separated by an air gap that is formed by creating, on the substrate, insulator standoffs which come in contact with the plate. A suitable dielectric material useful as a standoff on the substrate is a footrest that permits high aspect ratios.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.