Thin-film EL device, and its fabrication process
US6650046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/917
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention aims to provide, without incurring any cost increase, a thin-film EL device comprising a multilayer dielectric layer formed of a lead-based dielectric material by a solution coating-and-firing process, which has solved problems including light emission luminance drops, luminance variations and changes of light emission luminance with time, thereby achieving high display quality, and a process for the fabrication of the same. The object is accomplished by forming a patterned electrode layer on an electrically insulating substrate and constructing thereon a dielectric layer having a multilayer structure wherein lead-based dielectric layers formed by repeating the solution coating-and-firing process plural times and a non-lead-based, high-permittivity dielectric layer are stacked, the uppermost surface layer of the dielectric layer having a multilayer structure being the non-lead-based, high-permittivity dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.