ESD protection by a high-to-low resistance shunt
US6650519B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Dec 26, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/332
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for protecting a thin film sensor such as a magnetoresistive head from damaging electrical transients, such as electrostatic discharge. A thin film sensor assembly includes a thin film sensor in electrical contact with a first and a second electrical contact. A shunting structure is deposited between and in electrical communication with the first and second electrical contacts such that the shunting structure as deposited is a high resistance path between the first and second electrical contacts and does not electrically short the first and second electrical contacts. Heat treating the shunting structure then forms a low resistance path between the first and second electrical contacts to provide protection of the sensor from electrostatic discharge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.