Setting data retention thresholds in charge-based memory
US6651032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2001 |
| Grant date | Nov 18, 2003 |
| Priority date | — |
| Expiry date | Mar 23, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Programming a reference voltage in a reference cell of a charge-based memory to a level that will maximize the predicted operational life of the memory, based on the application-specific predicted usage profile of the memory and the effects of that usage profile on the leakage curves of the various memory states. The different states of a memory cell may have different leakage rates, based on operational and environmental considerations, causing the cell to fail prematurely in one state, while having significant remaining life in the other state(s). The operational life of the memory can be increased by adjusting the reference threshold voltage so that the faster-leaking sate will last longer before failure occurs. Maximum operational life can be achieved by setting the reference voltage to maximize the predicted time-to-failure of the state with the shortest predicted time-to-failure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.