Method of manufacturing semiconductor device
US6651678B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2002 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Apr 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28123
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a semiconductor device preventing tapering of a gate electrode edge includes a main etching of an electrode or wiring material supported by a dielectric film at a semiconductor substrate surface to expose the dielectric film. After the main etching step, residues of the electrode or the wiring material by sequentially etching utilizing a first gas mixture including a halogen-containing gas and an additive gas suppressing etching of the dielectric film by the halogen-containing gas, and in a second gas mixture gas including the halogen-containing gas and the additive gas and having the additive gas amount in a larger concentration than the first gas mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.