Adjusting lithium oxide concentration in wafers using a two-phase lithium-rich source
US6652644B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2002 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In one embodiment, lithium oxide concentration in wafers is adjusted by placing the wafers in a vessel. Vapor of a lithium oxide source is provided and absorbed by the wafers, thereby adjusting the lithium oxide concentration in the wafers. In another embodiment, a two-phase lithium-rich source is placed between wafers such that space in the process chamber is efficiently utilized. In another embodiment, the wafers to be processed are placed in a section of a process chamber (e.g., process tube). Lithium oxide is introduced on end of the process chamber. Carrier gas is also introduced on that end of the process chamber to carry the lithium oxide into the section of the process chamber where the wafers are located. By adjusting the partial pressure of lithium oxide in the process chamber, the rate at which lithium oxide is absorbed by the wafers is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.