Crystal growth device and method
US6652647B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 27, 2002 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Aug 27, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The device according to invention comprises an ampoule (4) at the bottom of a crucible (3) for crystal growing by progressive solidification of a liquid, and a specific means of heating (9) to adjust the temperature of the volume of this gas pocket and establish an overpressure at the bottom of the crucible compared to the top in order to ensure a contraction of the crystal (2) at the moment of its solidification and to avoid defects in the crystals. By eliminating a pressure regulating circuit linking these two extreme regions in order to establish the overpressure directly, the lay out is considerably simplified and at the same time avoids condensations of the vaporised portions of the crystal in the pipes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.