Method of producing a sputtering target
US6652806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Sep 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of &agr;, &bgr;, &ggr; and &dgr; thereof being in the relationship of 0.5≦&agr;<8, 5≦&bgr;≦23, 17≦&ggr;≦38, 32≦&dgr;≦73, &agr;≦&bgr;, and &agr;+&bgr;+&ggr;+&dgr;=100, and a method of producing the above sputtering target is provided. An optical recording medium includes a recording layer containing a phase-change recording material which includes as constituent elements Ag, In, Te and Sb with the respective atomic percents of &agr;, &bgr;, &ggr; and &dgr; thereof being in the relationship of 1≦&agr;<6, 7≦&bgr;≦20, 20≦&ggr;≦35, 35≦&dgr;≦70, and &agr;+&bgr;+&ggr;+&dgr;=100, and is capable of recording and erasing information by utilizing the phase change of the recording material in the recording layer. A method of forming the above recording layer for the optical recording medium is also provided. In addition, there is provided an optical recording method using the above-mentioned phase-change optical recording medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.