Photo mask for fabricating a thin film transistor liquid crystal display
US6653028B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Aug 17, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a photo mask employing in a TFT-LCD fabrication using 4-mask process. The disclosed photo mask comprises a transparent substrate and a shielding pattern formed thereon, wherein the shielding pattern includes a pair of first shielding patterns each having the rectangular shape disposed with separation to cover source and drain formation regions, a pair of second shielding patterns of a bar type disposed between the first shielding patterns and third shielding patterns of a bar type disposed on lower and upper portions of the first and the second shielding patterns to make a clear division between a light transmittance region and a light shielding region on the edge of a channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.