Resin, a double resin layer for extreme ultraviolet light (EUV) photolithography, and an extreme ultraviolet light (EUV) photolithography process
US6653054B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 25, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jul 25, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/075
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor substrate etching masking layer onto which the pattern to be etched can be transferred by photolithography at extreme ultraviolet light wavelengths from 10 to 100 nm and which is resistant to plasma etching. An ultraviolet light semiconductor integrated circuit photolithography process and the use for fabricating a double masking layer for semiconductor substrate etching of a photo-ablation layer sensitive to extreme ultraviolet light and resistant to deep ultraviolet light and/or ultraviolet light coupled to a polymer resin layer resistant to extreme ultraviolet light and to plasma etching when the resin has been developed and sensitive to deep ultraviolet light and/or to ultraviolet light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.