Double intracavity contacted long-wavelength VCSELs and method of fabricating same
US6653158B2 · kind B2 · utility
8Cited by
29References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2001 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.