Structure and method for doping of III-V compounds
US6653213B2 · kind B2 · utility
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4References
23Claims
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Key dates
| Filing date | Dec 21, 2000 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jan 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A structure for doping of III-V compounds is provided. The structure is a multi-layered structure in which layers of dopant are alternated with layers of initially undoped III-V compound. Dopant diffuses from the layers of dopant into the layers of III-V compound. The structure does not facilitate the introduction of impurities into the III-V compound during the diffusion of the dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.