Integrated thin-film photoelectric conversion module
US6653550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2002 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | May 14, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/29
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated thin-film photoelectric conversion module includes a multi-layered film including a first electrode layer, a semiconductor layer and a second electrode layer stacked on a main surface of a substrate. The multi-layered film includes a cell region including a plurality of photoelectric conversion cells connected in series, a bypass diode region and a connection region. The connection region does not connect the bypass diode to the cell during reverse bias treatment of the cell and the bypass diode, while the connection region connects the bypass diode in antiparallel to at least one of the plurality of cells connected in series after the reverse bias treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.