Semiconductor wafers with integrated heat spreading layer
US6653658B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2002 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Jul 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention is directed to semiconductor wafer structures having increased thermal conductivity over conventional semiconductor wafer designs due to the inclusion of an isotopically-enriched material on at least one surface of the wafer substrate. The isotopically-enriched material may be isotopically-enriched silicon, germanium, silicon-germanium alloys, gallium arsenide, aluminum gallium arsenide, gallium nitride, gallium phosphide, gallium indium nitride, indium phosphide or combinations and alloys of these materials. In another embodiment, the substrate is removed from the wafer structure to leave a top semiconductor layer on a layer of isotopically-enriched materials with no underlying substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.