Semiconductor device and production method thereof
US6653701B1 · kind B1 · utility
90Cited by
13References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2000 |
| Grant date | Nov 25, 2003 |
| Priority date | — |
| Expiry date | Mar 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having laminated successively a porous semiconductor layer, an inorganic semiconductor layer, and optionally an organic substance layer formed therebetween is disclosed. The semiconductor device is produced by immersing a porous semiconductor layer or a semiconductor layer having an organic substance layer on the surface thereof in a solution containing the elements constituting an inorganic semiconductor or compounds of the elements and forming the inorganic semiconductor layer on the porous semiconductor layer or the organic substance layer in the solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.