Plasma enhanced chemical deposition with low vapor pressure compounds

US6656537B2 · kind B2 · utility

Assignee

• Battelle Memorial Institute · CH

Inventors

• John D. Affinito · Kennewick, US
• Gordon L. Graff · West Richland, US
• Peter M. Martin · Kennewick, US
• Mark E. Gross · Pasco, US
• Eric Mast · Richland, US
• Michael Hall · West Richland, US

Key dates

• Filing date: Mar 19, 2001
• Grant date: Dec 2, 2003
• Expiry date: Aug 30, 2021

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/50
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for plasma enhanced chemical vapor deposition of low vapor monomeric materials. The method includes flash evaporating a polymer precursor forming an evaporate, passing the evaporate to a glow discharge electrode creating a glow discharge polymer precursor plasma from the evaporate, and cryocondensing the glow discharge polymer precursor on a substrate as a cryocondensed polymer precursor layer, and crosslinking the cryocondensed polymer precursor layer thereon, the crosslinking resulting from radicals created in the glow discharge polymer precursor plasma.