Method to grow self-assembled epitaxial nanowires
US6656573B2 · kind B2 · utility
33Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Nov 13, 2001 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Dec 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249921
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Self-assembled nanowires are provided, comprising nanowires of a first crystalline composition formed on a substrate of a second crystalline composition. The two crystalline materials are characterized by an asymmetric lattice mismatch, in which in the interfacial plane between the two materials, the first material has a close lattice match (in any direction) with the second material and has a large lattice mismatch in all other major crystallographic directions with the second material. This allows the unrestricted growth of the epitaxial crystal in the first direction, but limits the width in the other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.