Bulk monocrystalline gallium nitride
US6656615B2 · kind B2 · utility
162Cited by
10References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 17, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | May 17, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.