Semiconductor manufacturing apparatus and manufacturing method for thin film semiconductor device
US6657154B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1997 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | May 30, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/908
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
In a manufacturing technology for forming a thin film transistor comprising a laser irradiation step, objects of the present invention are to obtain a high performance and multifunction semiconductor manufacturing apparatus and thin film transistor manufacturing method. A silicon thin film 201 is formed on a glass substrate 202, and laser 203 is irradiated onto this thin film 201 whereby a re-crystallization film is obtained. This re-crystallization film undergoes a hydrogen plasma processing so that dangling-bonds of silicon are terminated. Moreover, a step for forming a silicon dioxide film 205 on the re-crystallization film is included. These steps are performed under the conditions that the glass substrate 202 is not exposed to the air and a processing temperature is 350° C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.