Photon source
US6657222B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2000 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | May 21, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A photon source, comprising a first semiconductor region having excess carriers with a first conductivity type, and a second semiconductor region having excess carriers with a second conductivity type, the first and second conductivity types being opposing conductivity types; means for creating a surface acoustic wave (SAW) travelling from the first semiconductor region to the second semiconductor region such that excess carriers from the first semiconductor region are carried by the wave to the second region and quantizing means for quantizing the carrier transport caused by the wave, such that the number of carriers introduced into the second semiconductor region can be controlled to the accuracy of a single carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.