Thin film transistors having source wiring and terminal portion made of the same material as the gate electrodes
US6657260B2 · kind B2 · utility
125Cited by
15References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Feb 21, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136295
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 &mgr;m or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.