Monolithically integrated electronic device and fabrication process therefor

US6657262B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventor

• Davide Giuseppe Patti · Mascalucia, IT

Key dates

• Filing date: Mar 30, 2001
• Grant date: Dec 2, 2003
• Expiry date: Jun 21, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

An electronic device, integrated monolithically in a semiconductor substrate and comprising a bipolar transistor connected in series to at least one MOS transistor, the bipolar transistor having a base region that includes a first buried region and a first diffused region extending continuously from the substrate surface down to the buried region, and the diffused region is bordered by an isolation trench region extending in the buried region.