Semiconductor anti-interference band for integrated circuit
US6657285B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | Jul 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor anti-interference band distributed on peripheries of partial of regional circuits in an integrated circuit is assembled by an unequal number of PNP structures; two metal bands are disposed on the surface layer of the integrated circuit, wherein one band connects with GND and the other connects with Vcc; to add positive voltage at Vcc increases the charge at P+ tip thereby generating a parasitic capacitance on a poly layer between two P+ tips and limiting a noisy signal within the distributed area; furthermore, the P+ tip and an N well connect to produce a positive voltage zone in a large area to forcefully prevent a noisy signal current from passing through and make it discharge at a ground end with lower voltage so as to achieve the electromagnetic anti-interference function of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.