Gate circuit and semiconductor circuit to process low amplitude signals, memory, processor and information processing system manufactured by use of them
US6657459B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 14, 2002 |
| Grant date | Dec 2, 2003 |
| Priority date | — |
| Expiry date | May 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/018521
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device, responsive to an input signal having a low amplitude and short transition time, operates with low power consumption and prevents the flow of breakthrough current. In an example circuit thereof, the input signal is transmitted through an NMOS pass transistor to the gate of a first NMOS transistor and is applied, through a second NMOS transistor, to the gate of a first PMOS transistor, the first PMOS transistor performing complementary operation with the first NMOS transistor through the second NMOS transistor; the gate of the first PMOS transistor is connected to the power supply potential through the second PMOS transistor; the gate of the second NMOS transistor is connected to the power supply potential; and the gate of the second PMOS transistor is controlled by the signal at a common drain connection of the first NMOS and first PMOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.