Application of high spin polarization materials in two terminal non-volatile bistable memory devices

US6657888B1 · kind B1 · utility

Assignee

• BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA · US

Inventors

• Bernard Doudin · Lincoln, US
• Andrei Sokolov · Lincoln, US
• Cheol-soo Yang · Lincoln, US
• Lu Yuan · Carlsbad, US
• Sy-Hwang Liou · Lincoln, US

Key dates

• Filing date: Apr 30, 2002
• Grant date: Dec 2, 2003
• Expiry date: Apr 30, 2022

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/943
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one CrO2/Cr2O3/CrO2 sequence but typically have multiple CrO2/Cr2O3/CrO2 sequences in series.